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AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor features on semiconductor confidential and proprietary AR023ZM/d rev. 1 pub. 8/15 en 1 ?semiconductor components industries, llc 2015, 1/2.7-inch 2.1 mp/full hd digital image sensor AR023ZM datasheet, rev. 1 for the latest revision, please visit www.onsemi.com features ? superior low-light performance ? latest 3.0 ? m pixel with on semiconductor dr-pix? technology with dual conversion gain ? full hd support at up to 1080p 60 fps for superior video performance ? linear or high dynamic range capture ? optional adaptive local tone mapping (altm) ? pixel or line interleaved t1/t2 output ? support for external mechanical shutter ? on-chip phase-locked loop (pll) oscillator ? integrated position-based color and lens shading correction ? slave mode for precise frame-rate control ? stereo/3d camera support ? statistics engine ? data interfaces: four-lane serial high-speed pixel interface (hispi) differential signaling (slvs and hiv cm ), or parallel ? auto black level calibration ? high-speed configurable context switching ?temperature sensor applications ? smart home automation ?smart lighting ?smart appliances ? smart baby monitoring general description on semiconductor's AR023ZM is a 1/2.7-inch cmos digital image sensor with an active-pixel array of 1928hx1088v. it captures images in either linear or high dynamic range modes, with a rolling-shutter readout. it includes sophisticated camera functions such as in-pixel binning, windowing and both video and single frame modes. it is designed for both low light and high dynamic range scene performance. it is programmable through a simp le two-wire serial inter- face. the AR023ZM produces extraordinarily clear, sharp digital pictures, and its ability to capture both continuous video and single frames makes it the per- fect choice for a wide range of applications. table 1: key parameters parameter typical value optical format 1/2.7-inch (6.6 mm) active pixels 1928(h) x 1088(v) (16:9 mode) pixel size 3.0 ? m x 3.0 ?? m color filter array rgb bayer shutter type electronic rolling shutter and grr input clock range 6 C 48 mhz output clock maximum 148.5 mp/s (4-lane hispi) 74.25 mp/s (parallel) output serial hispi 10-, 12-, 14-, 16-, or 20-bit parallel 10-, 12-bit frame rate 1080p 60 fps responsivity 4.0 v/lux-sec snr max 41 db max dynamic range up to 105 db supply voltage i/o 1.8 or 2.8 v digital 1.8 v analog 2.8 v hispi 0.3 v - 0.6 v (slvs), 1.7 v - 1.9 v (hivcm) power consumption (typical) <896 mw (hdr 1080p60, 8x gain, 25c) operating temperature C30c to +85c ambient package options 10x10 mm 80-pin ibga
AR023ZM/d rev. 4 pub. 8/15 en 2 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor ordering information on semiconductor confidential and proprietary ordering information see the on semiconductor device nomenclature document (tnd310/d) for a full description of the naming convention used for image sensors. for reference documenta- tion, including information on evaluation kits, please visi t our web site at www.onsemi.com. table 2: available part numbers part number product description orderable product attribute description AR023ZMcsc00suea0-drbr 2 mp 1/3" cis rgb, 0deg cra, ibga package drypack, anti-reflective glass AR023ZMcsc00suead3-gevk rgb, 0deg cra, demo kit demo kit AR023ZMcsc00sueah3-gevb rgb, 0deg cra, headboard headboard AR023ZMcsc00suear-gevk rgb, 0deg cra matrixcam
ar0230cs_ds rev. 4 pub. 8/15 en 3 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor table of contents on semiconductor confidential and proprietary table of contents features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 ordering information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 functional overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 pixel data format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 features overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 electrical specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 power-on reset and standby timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31 revision history. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
ar0230cs_ds rev. 4 pub. 8/15 en 4 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor list of figures on semiconductor confidential and proprietary list of figures figure 1: block diagram of AR023ZM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 figure 2: typical configuration: serial fo ur-lane hispi interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 figure 3: typical configuration: parallel pixel data interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 figure 4: 80-ball ibga package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 figure 5: pixel array description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 figure 6: pixel color pattern detail (top right corner) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 figure 7: imaging a scene . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 figure 8: quantum efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 figure 9: two-wire serial bus timing para meters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 figure 10: i/o timing diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 figure 11: power up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31 figure 12: power down. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33 figure 13: 80ibga 10 x 10 package diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
ar0230cs_ds rev. 4 pub. 8/15 en 5 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor list of tables on semiconductor confidential and proprietary list of tables table 1: key parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 table 2: available part numbers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 table 3: pin descriptions, 80-ball ibga. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 table 4: list of configurable registers for context a and contex t b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 table 5: two-wire serial bus characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 table 6: i/o timing characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 table 7: dc electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 table 8: absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 table 9: 1080p30 hdr (altm) 74mhz parallel 2.8v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 table 10: 1080p30 linear 74mhz parallel 2.8v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 table 11: 1080p30 hdr (altm) 74mhz parallel 1.8v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26 table 12: 1080p30 linear 74 mhz parallel 1.8v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 table 13: 1080p30 hdr (altm) 74 mhz hispi sl vs (low power mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 table 14: 1080p30 linear 74 mhz hispi slvs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 table 15: 1080p30 hdr (altm) 74 mhz hispi hivcm (low power mode ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28 table 16: 1080p30 linear 74 mhz hispi hivcm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 table 17: line interleaved hispi slvs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29 table 18: line interleaved hispi hivcm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 table 19: channel skew . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 table 20: power-up sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32 table 21: power-down sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
ar0230cs_ds rev. 4 pub. 8/15 en 6 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor general description on semiconductor confidential and proprietary general description the on semiconductor AR023ZM can be operat ed in its default mode or programmed for frame size, exposure, gain, and other pa rameters. the default mode output is a 1080p-resolution image at 60 frames per seco nd (fps) through the hispi port. in linear mode, it outputs 12-bit or 10-bit a-law compre ssed raw data, using either the parallel or serial (hispi) output ports. in high dynamic range mode, it outputs 12-bit compressed data using parallel output. in hispi mode, 12 - or 14-bit compressed , or 16-bit linearized data may be output. the device may be operat ed in video (master) mode or in single frame trigger mode. frame_valid and line_valid signals are output on dedicated pins, along with a synchronized pixel clock in parallel mode. the AR023ZM includes additional features to allow application-specific tuning: windowing and offset, auto black level correction, and on-board temperature sensor. optional register information and histogram statistic information can be embedded in the first and last 2 lines of the image frame. the AR023ZM is designed to operate over a wide temperature range of -30c to +85c ambient.
ar0230cs_ds rev. 4 pub. 8/15 en 7 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor functional overview on semiconductor confidential and proprietary functional overview the AR023ZM is a progressive-sc an sensor that generates a stream of pixel data at a constant frame rate. it uses an on-chip, phas e-locked loop (pll) that can be optionally enabled to generate all internal clocks from a single master input clock running between 6 and 48 mhz. the maximum output pixel rate is 148.5 mp/s, corresponding to a clock rate of 74.25 mhz. figure 1 shows a block di agram of the sensor configured in linear mode, and in hdr mode. figure 1: block diagram of AR023ZM user interaction with the sensor is through the two-wire serial bus, which communi- cates with the array control, analog signal chai n, and digital signal chain. the core of the sensor is a 2.1 mp active- pi xel sensor array. the timing and control circuitry sequences through the rows of the array, resetting and then reading each row in turn. in the time interval between resetting a row and reading that row, the pixels in the row integrate incident light. the exposure is controlled by varying the time interval between reset and readout. once a row has been read, the data from the columns is sequenced through an analog signal chain (providing offset correc tion and gain), and then through an analog- to-digital converter (adc). th e output from the adc is a 12-bit value for each pixel in the array. the adc output passes through a digital processing signal chain (which provides further data path corrections and appl ies digital gain). the sensor also offers a row noise correction black level correction test pattern generator pixel defect correction adaptive cd filter digital gain and pedestal a-law compression parallel hispi 12 bits 10 bits 12 12 adc data hdr linearization smoothing filter digital gain and pedestal companding or altm parallel hispi 12 bits 16 14 or 12 bits 16 bits row noise correction black level correction test pattern generator pixel defect correction adaptive cd filter motion correction 12 12 adc data hdr linearization in linear mode in hdr mode
ar0230cs_ds rev. 4 pub. 8/15 en 8 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor functional overview on semiconductor confidential and proprietary high dynamic range mode of operation where multiple images are combined on-chip to produce a single image at 16-bit per pixel value. a compression mode is further offered to allow the 16 bits per pixel to be transmitte d to the host system as a 12-bit value with close to zero loss in image quality. figure 2: typical configuration: serial four-lane hispi interface notes: 1. all power supplies mu st be adequately decoupled. 2. on semiconductor recommends a resistor value of 1.5k ? , but a greater value may be used for slower two-wire speed. 3. the parallel interface output pads can be left un connected if the serial output interface is used. 4. on semiconductor recommends that 0.1 ? f and 10 ? f decoupling capacitors for each power supply are mounted as close as possible to the pad. actu al values and results may vary depending on lay- out and design considerations. refer to the ar0 23zm demo headboard schematics for circuit rec- ommendations. 5. on semiconductor recommends that analog power planes are placed in a manner such that cou- pling with the digital power planes is minimized. 6. i/o signals voltage must be configured to match v dd _io voltage to minimize any leakage currents. v dd _io v dd _slvs v dd _pll v dd v aa v dd v aa v aa _pix master clock (6C48 mhz) s data sclk reset_bar test extclk d gnd a gnd digital ground analog ground digital core power 1 hispi power 1 analog power 1 to controller from controller v dd _io v dd _pll pll power 1 digital i/o power 1 1.5k 2 1.5k 2 analog power 1 v aa _pix slvsc_n slvsc_p slvs0_p slvs0_n slvs1_p slvs1_n slvs2_p slvs2_n slvs3_p slvs3_n v dd _slvs trigger oe_bar s addr shutter flash
ar0230cs_ds rev. 4 pub. 8/15 en 9 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor functional overview on semiconductor confidential and proprietary figure 3: typical configuration: parallel pixel data interface notes: 1. all power supplies mu st be adequately decoupled. 2. on semiconductor recommends a resistor value of 1.5k ? , but a greater value may be used for slower two-wire speed. 3. the serial interface output pads and v dd slvs can be left unconnected if the parallel output inter- face is used. 4. on semiconductor recommends that 0.1 ? f and 10 ? f decoupling capacitors for each power supply are mounted as close as possible to the pad. actu al values and results may vary depending on lay- out and design considerations. refer to the ar0 23zm demo headboard schematics for circuit rec- ommendations. 5. on semiconductor recommends that analog power planes are placed in a manner such that cou- pling with the digital power planes is minimized. 6. i/o signals voltage must be configured to match v dd _io voltage to minimize any leakage currents. 7. the extclk input is limited to 6-48 mhz. v dd master clock (6-48 mhz) s data sclk test frame_valid d out [11:0] extclk d gnd digital ground analog ground digital core power 1 to controller from controller line_valid pixclk reset_bar v dd _io digital i/o power 1 1.5k 2 1.5k 2, v aa v aa _pix analog power 1 vdd_pll pll power 1 analog power 1 v aa _pix v dd _io v dd _pll v dd v aa trigger oe_bar a gnd s addr shutter flash
ar0230cs_ds rev. 4 pub. 8/15 en 10 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor functional overview on semiconductor confidential and proprietary figure 4: 80-ball ibga package a b c d e f g h j top view (ball down) slvs0_p slvs1_p slvsc_p slvs2_p slvs3_p v dd _pll slvs0_n slvs1_n slvsc_n slvs2_n slvs3_n extclk v dd _ slvs d gnd d gnd v dd d gnd s addr s clk s data a gnd d gnd v dd _io v aa _pix line_ valid frame_ valid pixclk flash d out 7 d out 1 d out 11 d out 10 d out 9 test d out 4d out 3 d out 6 d out 8 d gnd trigger oe_bar d out 0 d out 2 d out 5 reset_ bar 12 3 567 8 4 v dd d gnd shutter reserved 9 d gnd v aa v aa v aa v aa v dd v dd v dd v dd v dd reserved d gnd d gnd d gnd d gnd d gnd d gnd d gnd d gnd a gnd a gnd a gnd v dd _io v dd _io v dd _io v dd _io v dd _io a gnd d gnd d gnd v dd _io
ar0230cs_ds rev. 4 pub. 8/15 en 11 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor functional overview on semiconductor confidential and proprietary table 3: pin descriptions, 80-ball ibga name ibga pin type description slvs0_p a2 output hispi serial data, lane 0, differential p. slvs1_p a3 output hispi serial data, lane 1, differential p. slvsc_p a4 output hispi serial ddr clock differential p. slvs2_p a5 output hispi serial data, lane 2, differential p. slvs3_p a6 output hispi serial data, lane 3, differential p. v dd _pll b1 power pll power. slvs0_n b2 output hispi serial data, lane 0, differential n. slvs1_n b3 output hispi serial data, lane 1, differential n. slvsc_n b4 output hispi serial ddr clock differential n. slvs2_n b5 output hispi serial data, lane 2, differential n. slvs3_n b6 output hispi serial data, lane 3, differential n. shutter b9 output control for external mechanical shutte r. can be left floating if not used. v aa c1, g1, d9, f9 power analog power. a gnd c2, g2, d8, e8, f8 power analog ground. v dd _slvs c4 power 0.3v-0.6v or 1.7v - 1.9v port to hispi output driver. set the high_vcm (r0x306e[9]) bit to 1 when configuring vdd_slvs to 1.7 C 1.9v. v dd c5, j5, a9, h9, a7, d1, f1 power digital power. reserved c9, f7 d gnd b7, c7, d7, e7, g7, b8, c8, g8, d2, e2, f2, h2, c3, g3, h3, c6, j6 power digital ground. extclk d3 input external input clock. pixclk d4 output pixel clock out. dout is valid on rising edge of this clock. s addr d5 input two-wire serial address select. 0: 0x20. 1: 0x30 trigger d6 input exposure synchronization input. v aa _pix e9 power pixel power. v dd _io e1, h1, j2, j7, a8, g9, j9 power i/o supply power. s data e3 i/o two-wire serial data i/o. flash e4 output flash control output. frame_valid e5 output asserted when dout frame data is valid. s clk e6 input two-wire serial clock input. d out 11 f3 output parallel pixel data output (msb) d out 10 f4 output parallel pixel data output. d out 9f5 output parallel pixel data output. line_valid f6 output asserted when do ut line data is valid. d out 8g4 output parallel pixel data output. d out 7g5 output parallel pixel data output. d out 6g6 output parallel pixel data output. d out 5h4 output parallel pixel data output. d out 4h5 output parallel pixel data output. d out 3h6 output parallel pixel data output. reset_bar h7 input asynchronous reset (active low). all settings are restored to factory default.
ar0230cs_ds rev. 4 pub. 8/15 en 12 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor functional overview on semiconductor confidential and proprietary test h8 input. manufacturing test enable pin (connect to dgnd). d out 2j1 output parallel pixel data output. d out 1j3 output parallel pixel data output. d out 0j4 output parallel pixel data output (lsb) oe_bar j8 input output enable (active low). table 3: pin descriptions, 80-ball ibga name ibga pin type description
ar0230cs_ds rev. 4 pub. 8/15 en 13 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor pixel data format on semiconductor confidential and proprietary pixel data format pixel array structure while the sensor's format is 1928 x1088, addi tional active columns and active rows are included for use when horizontal or vertical mirrored readout is enabled, to allow readout to start on the same pixel. the pixel adjustment is always performed for mono- chrome or color versions. the active area is surrounded with optically transparent dummy pixels to improve image uniformity wi thin the active area. not all dummy pixels or barrier pixels can be read out. figure 5: pixel array description 10 b arr i er + 4 b or d er p i xe l s light dummy pixel active pixel 10 barrier + 4 border pixels 1944 2 barrier + 6 border pixels 2 barrier + 6 border pixels 1116 1928 1 x 1088 5.78 mm x 3.26 mm
ar0230cs_ds rev. 4 pub. 8/15 en 14 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor pixel data format on semiconductor confidential and proprietary figure 6: pixel color pattern detail (top right corner) default readout order by convention, the sensor core pixel array is shown with pixel (0,0) in the top right corner (see figure 6). this reflects the actual layout of the array on the die. also, the first pixel data read out of the sensor in defa ult condition is that of pixel (10, 14). when the sensor is imaging, the active surface of the sensor faces the scene as shown in figure 7. when the image is read out of the se nsor, it is read one row at a time, with the rows and columns sequenced as shown in figure 7. figure 7: imaging a scene active pixel (0,0) array pixel (0, 0) row reado ut direction g b g b g b r g r g r g r g r g r g r g r g r g r g r g r g g b g b g b g b g b g b g b g b g b column readout direction lens pixel (0,0) row readout order column readout order scene sensor (rear view)
ar0230cs_ds rev. 4 pub. 8/15 en 15 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor features overview on semiconductor confidential and proprietary features overview for a complete description, recommendations, and usage guidelines for product features, refer to the AR023ZM developer guide. 3.0 ? m dual conversion gain pixel to improve the low light performance and keep the high dynamic range, a large (3.0um) dual conversion gain pixel is implemented for better image optimization. with a dual conversion gain pixel, the conversion gain of the pixel may be dynamically changed to better adapt the pixel response based on dynamic range of the scene. this gain can be switched manually or automatically by an auto exposure control module. hdr by default, the sensor powers up in hdr mode. the hdr scheme used is multi-exposure hdr. this allows the sensor to handle up to 105 db of dynamic range. in hdr mode, the sensor sequentially captures two exposures by maintaining two separate read and reset pointers that are interleaved within the roll ing shutter readout. the intermediate pixel values are stored in line buffers while waiting for the two exposure values to be present. as soon as a pixel's two exposure values ar e available, they are combined to create a linearized 16-bit value for each pixel's respon se. the exposure ratio may be set to 4x, 8x, 16x, or 32x. depending on whethe r hispi or parallel mode is selected, the full 16 bit value may be output, it can be compressed to 12 bits using adaptive local tone mapping (altm), or companded to 12 or 14 bits. options to output t1 only, t2 only, or pixel in terleaved data are also available. individual exposures may be read out in a line interleaved mode as described in the t1/t2 line interleaved mode section. resolution the active array supports a maximum of 1928x 1088 pixels to support 1080p resolution. utilizing a 3.0um pixel will result in an op tical format of 1/2.7-inch (approximately 6.6mm diagonal). frame rate at full (1080p) resolution, the AR023ZM is capable of running up to 3060 fps. image acquisition mode the AR023ZM supports two image acquisition modes: ? electronic rolling shutter (ers) mode this is the normal mode of operation. wh en the AR023ZM is streaming, it generates frames at a fixed rate, and ea ch frame is integrated (expos ed) using the ers. when ers mode is in use, timing and control logic with in the sensor sequences through the rows of the array, resetting and then reading each row in turn. in the time interval between reset- ting a row and subsequently re ading that row, the pixels in the row integrate incident light. the integration (exposur e) time is controlled by varying the time between row reset and row readout. for each row in a frame, the time between row reset and row readout is the same, leading to a uniform in tegration time across the frame. when the integration time is changed (by using the two- wire serial interface to change register settings), the timing and contro l logic controls the transition from old to new integration
ar0230cs_ds rev. 4 pub. 8/15 en 16 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor features overview on semiconductor confidential and proprietary time in such a way that the stream of outp ut frames from the AR023ZM switches cleanly from the old integration time to the new while only generating frames with uniform inte- gration. see ?changes to integration time? in the AR023ZM register reference. ? global reset mode. this mode can be used to acquire a single image at the current resolution. in this mode, the end point of the pixel integration time is controlled by an external electromechanical shutter, and the AR023ZM provides control si gnals to interface to that shutter. the benefit of using an external electromechanical sh utter is that it elimin ates the visual arti- facts associated with ers operat ion. visual artifacts arise in ers operation, particularly at low frame rates, because an ers image e ffectively integrates each row of the pixel array at a different point in time. embedded data and statistics the AR023ZM has the capability to output im age data and statistics embedded within the frame timing. there are two types of information embedded within the frame readout. ?embedded data: if enabled, these are displayed on the two rows immediately before the first active pixel row is displayed. ? embedded statistics: if enabled, these are displayed on the two rows immediately after the last active pixel row is displayed. multi-camera synchronization the AR023ZM supports advanced line sync hronization controls for multi-camera (stereo) support. slave mode the slave mode feature of the AR023ZM supports triggering the start of a frame readout from an input signal that is supplied from an external asic. the slave mode signal allows for precise control of frame rate and register change updates. context switching and register updates the user has the option of using the highly configurable context memory, or a simplified implementation in which only a subset of registers is available for switching. the AR023ZM supports a highly conf igurable context switching ram of size 256 x 16. within this context memory, changes to any register may be stored. the register set for each context must be the same, but the number of contexts and registers per context are limited only by the size of the context memory. alternatively, the user may switch between two predefined register sets a and b by writing to a context switch change bit. when the context switch is configured to context a the sensor will reference the context a regist ers. if the context switch is changed from a to b during the readout of frame n, the sensor will then reference the context b coarse_integration_time registers in frame n+ 1 and all other context b registers at the beginning of reading frame n+2. the sensor will show the same behavior when changing from context b to context a. the registers listed in table 4 are context-switchable:
ar0230cs_ds rev. 4 pub. 8/15 en 17 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor features overview on semiconductor confidential and proprietary table 4: list of configurable registers for context a and context b motion compensation/dlo in typical multi-exposure hdr systems, moti on artifacts can be created when objects move during the t1 or t2 integration time. when this happens, edge artifacts can poten- tially be visible and might look like a ghos ting effect. to correct this, the AR023ZM has special 2d motion compensation circuitry that detects motion artifacts and corrects the image. the motion compensation feature can be optionally enabled by register write. additional parameters are available to co ntrol the extent of motion detection and correction as per the requirements of the specific application. tone mapping real-world scenes often have a very high dynamic range (hdr) that far exceeds the elec- trical dynamic range of the imager. dynamic range is defined as the luminance ratio between the brightest and the darkest objects in a scene. even though the AR023ZM can capture full dynamic range images, the images are still limited by the low dynamic range of display devices. today's typical lcd moni tor has a contrast ratio around 1,000:1 while it is not atypical for an hdr image having a contrast ratio of around 250,000:1. there- fore, in order to reproduce hdr images on a low dynamic range display device, the captured high dynamic range must be compressed to the available range of the display device. this is commonly called tone mapping. the AR023ZM has implemented an adaptive local tone mapping (altm) feature to reproduce visually ap pealing images that increase the local contrast and the visibility of the images. context a context b register description register description coarse_integration_time coarse_integration_time_cb line_length_pck line_length_pck_cb frame_length_lines frame_length_lines_cb row_bin row_bin_cb col_bin col_bin_cb fine_gain fine_gain_cb coarse_gain coarse_gain_cb x_addr_start x_addr_start_cb y_addr_start y_addr_start_cb x_addr_end x_addr_end_cb y_addr_end y_addr_end_cb y_odd_inc y_odd_inc_cb x_odd_inc x _odd_inc_cb green1_gain green1_gain_cb blue_gain blue_gain_cb red_gain red_gain_cb green2_gain green2_gain_cb global_gain global_gain_cb operation_mode_ctrl operation_mode_ctrl_cb bypass_pix_comb bypass_pix_comb_cb
ar0230cs_ds rev. 4 pub. 8/15 en 18 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor features overview on semiconductor confidential and proprietary adaptive color difference (adacd) noise filtering a good noise reduction filter will remove noise from an image while retaining as much image detail as possible. to retain image deta il, the noise reduction filter must adapt to the image signal. to remove noise, the noise reduction filter must adapt to the noise level of the image signal. the key is to remove the appropriate amount of noise. over-filtering will cause image blurring while under-filtering will leave noise in the image. the adacd algorithm relies on a noise model derived from characterization data to aid in separating noise from signal. the AR023ZM adacd algorithm performs pixel-by -pixel color noise correction for each of the red, blue, and green color planes. ea ch pixel is corrected based on surrounding pixel values on the same color plane and a noise model. the noise model is based on characterization data, and takes into account applied analog gain. fast mode switch (combi mode) to facilitate faster switching between linear and hdr modes, the AR023ZM includes a combi mode feature. when enabled, comb i mode loads a single (hdr) sequencer. when switching from hdr to linear modes, the sequencer remains the same, but only the t1 image is output. while not optimized fo r linear mode operation, it allows faster mode switching as a new sequencer load is not needed. switching between modes may result in the output of one bad frame. analog/digital gains a programmable analog gain of 1.5x to 12x (h dr) and 1.5x to 16x (linear) applied simul- taneously to all color channels will be featured along with a digital gain of 1x to 16x that may be configured on a per color channel basis. skipping/binning modes the AR023ZM supports subsampling. subsampl ing allows the sensor to read out a smaller set of active pixels by either ski pping, binning, or summing pixels within the readout window. horizontal binning is achieved in the digital readout. the sensor will sample the combined 2x adjacent pixels within the same color plane. vertical row binning is applied in the pixel readout. row bi nning can be configured as 2x rows within the same color plane. pixel skipping can be co nfigured up to 2x in both the x-direction and y-direction. skipping pixels in the x-dire ction will not reduce the row time. skipping pixels in the y direction will reduce the number of rows from the sensor effectively reducing the frame time. skipping will introduce image artifacts from aliasing. the AR023ZM supports row wise vertical bi nning. row wise vertical summing is not supported. clocking options the sensor contains a phase-locked loop (pll ) that is used for timing generation and control. the required vco clock frequency is attained through the use of a pre-pll clock divider followed by a multiplier. the pll multiplier should be an even integer. if an odd integer (m) is programmed, the pll will defaul t to the lower (m-1) value to maintain an even multiplier value. the multiplier is followed by a set of dividers used to generate the output clocks required for th e sensor array, the pixel anal og and digital readout paths, and the output parallel and serial interfaces . use of the pll is required when using the hispi interface.
ar0230cs_ds rev. 4 pub. 8/15 en 19 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor features overview on semiconductor confidential and proprietary temperature sensor the AR023ZM sensor has a built-in ptat-bas ed temperature sensor, accessible through registers, that is capable of measuring die ju nction temperature. the value read out from the temperature sensor register is an adc output value that needs to be converted downstream to a final temperature value in degrees celsius. since the ptat device char- acteristic response is quite linear in th e temperature range of operation required, a simple linear function can be used to conv ert the adc output value to the final tempera- ture in degrees celsius. a single reference point will be made availabl e via register read as well as a slope for back-calculating the junction temperature value. an error of +/-5% or better over the full specified operating range of the sensor is to be expected. silicon / firmware / sequ encer revision information a revision register will be provided to read out (via i 2 c) silicon and sequencer/otpm revision information. this will be helpful to distinguish among different lots of material if there are future otpm or sequencer revisions. lens shading correction the latest lens shading correction algorithm wi ll be included for potential low z height applications. companding the 16-bit linearized hdr image may be comp ressed to 12- or 14- bits using on-chip companding. this is useful if on-chip altm will not be used and the isp cannot handle 16 bit data. compression when the AR023ZM is configured for linear mode operation, the se nsor can optionally compress 12-bit data to 10-bit using a-la w compression. the a-law compression is disabled by default. packaging the AR023ZM will be offered in a 10x10 80-ibga package (parallel and hispi). the package will have anti-reflective coat ing on both sides of the cover glass. parallel interface the parallel pixel data interfac e uses these output-only signals: ?frame_valid ?line_valid ?pixclk ?d out [11:0] the parallel pixel data interface is disabled by default at power up and after reset. it can be enabled by programming r0x301a. when the parallel pixel data interface is in use, the serial data output signals can be left unconnected.
ar0230cs_ds rev. 4 pub. 8/15 en 20 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor features overview on semiconductor confidential and proprietary high speed serial pixel (hispi) interface the hispi interface supports three protocols, streaming-s, streaming-sp, and packetized sp. the streaming protocols conform to a stan dard video application where each line of active or intra-frame bl anking provided by the sensor is transmitted at the same length. the packetized sp protocol will transmit only the active data ignoring line-to-line and frame-to-frame blanking data. the hispi interface building block is a unidirectional differential serial interface with four data and one double data rate (ddr) clock lanes. one clock for every four serial data lanes is provided for phase alignm ent across multiple lanes. the AR023ZM supports serial data widths of 10, 12, 14, 16, or 20 bits on one, two, or four lanes. the specification includes a dll to compensate for differences in group delay for each data lane. the dll is connected to the clock lane and each data lane, which acts as a control master for the output delay buffers. once th e dll has gained phase lock, each lane can be delayed in 1/8 unit interval (ui) steps. this additional delay allows the user to increase the setup or hold time at the receiv er circuits and can be used to compensate for skew introduced in pcb design. delay compensation may be set for clock and/or data lines in the hispi_timing register r0x3 1c0. if the dll timing adjustment is not required, the data and clock lane delay settings should be set to a default code of 0x0000 to reduce jitter, skew, and power dissipation. sensor control interface the two-wire serial interface bus enables read /write access to control and status regis- ters within the AR023ZM. the interface prot ocol uses a master/slave model in which a master controls one or more slave devices. th e sensor acts as a slave device. the master generates a clock (s clk ) that is an input to the sensor and is used to synchronize trans- fers. data is transferred between the master an d the slave on a bidirectional signal (s data ). s data is pulled up to v dd _io off-chip by a 1.5k ? resistor. either the slave or master device can drive s data low-the interface protocol dete rmines which device is allowed to drive s data at any given time. the two-wire serial interface can run at 100 khz or 400 khz. t1/t2 line interleaved mode the AR023ZM has the capability to output the t1 and t2 exposures separately, in a line interleaved format. the purpose of this is to enable off chip hdr linear combination and processing. see the AR023ZM developer guide for more information.
ar0230cs_ds rev. 4 pub. 8/15 en 21 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor features overview on semiconductor confidential and proprietary figure 8: quantum efficiency 0 10 20 30 40 50 60 70 80 350 450 550 650 750 850 950 1050 1150 quantum efficiency (%) wavelength (nm) blue green (b) green (r) red
ar0230cs_ds rev. 4 pub. 8/15 en 22 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor electrical specifications on semiconductor confidential and proprietary electrical specifications unless otherwise stated, the following spec ifications apply under the following condi- tions: v dd = 1.8v ? 0.10/+0.15; v dd _io = v dd _pll = v aa = v aa _pix = 2.8v 0.3v; v dd _slvs = 0.4v ? 0.1/+0.2; t a = -30 c to +85 c-40 c to +105 c; output load = 10pf; frequency = 74.25 mhz; hispi off. two-wire serial register interface the electrical characteristics of the two-wire serial register interface (s clk , s data ) are shown in figure 9 and table 5. figure 9: two-wire serial bus timing parameters note: read sequence: for an 8-bit read, read waveforms start after write command and register address are issued. table 5: two-wire serial bus characteristics f extclk = 27 mhz; v dd = 1.8v; v dd _io = 2.8v; v aa = 2.8v; v aa _pix = 2.8v; v dd _pll = 2.8v; t a = 25c parameter symbol standard mode fast mode unit min max min max s clk clock frequency f scl 0 100 0 400 khz hold time (repeated) start condition. after this period, the first clock pulse is generated t hd;sta 4.0 - 0.6 - ? s low period of the sclk clock t low 4.7 - 1.3 - ? s high period of the sclk clock t high 4.0 - 0.6 - ? s set-up time for a repeated start condition t su;sta 4.7 - 0.6 - ? s data hold time t hd;dat 0 4 3.45 5 0 6 0.9 5 ? s data set-up time t su;dat 250 - 100 6 -ns rise time of both s data and s clk signals t r - 1000 20 + 0.1cb 7 300 ns fall time of both s data and s clk signals t f - 300 20 + 0.1cb 7 300 ns set-up time for stop condition t su;sto 4.0 - 0.6 - ? s bus free time between a stop and start condition t buf 4.7 - 1.3 - ? s capacitive load for each bus line cb - 400 - 400 pf s sr t su;sto t su;sta t hd;sta t high t low t su;dat t hd;dat t f s data s clk p s t buf t r t f t r t hd;sta
ar0230cs_ds rev. 4 pub. 8/15 en 23 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor electrical specifications on semiconductor confidential and proprietary notes: 1. this table is based on i 2 c standard (v2.1 january 2000). philips semiconductor. 2. two-wire control is i 2 c-compatible. 3. all values referred to v ihmin = 0.9 v dd and v ilmax = 0.1v dd levels. sensor exclk = 27 mhz. 4. a device must internally provide a hold time of at least 300 ns for the s data signal to bridge the undefined region of the falling edge of s clk . 5. the maximum t hd;dat has only to be met if the device does not stretch the low period ( t low) of the s clk signal. 6. a fast-mode i 2 c-bus device can be used in a standard-mode i 2 c-bus system, but the requirement t su;dat 250 ns must then be met. this will automa tically be the case if the device does not stretch the low period of the s clk signal. if such a device does stretch the low period of the s clk signal, it must output the next data bit to the s data line t r max + t su;dat = 1000 + 250 = 1250 ns (according to the standard-mode i 2 c-bus specification) before the s clk line is released. 7. cb = total capacitance of one bus line in pf. i/o timing by default, the AR023ZM launches pixel data, fv, and lv with the falling edge of pixclk. the expectation is that the user captures d out [11:0], fv, and lv using the rising edge of pixclk. see figure 10 below and table 6 on page 24 for i/o timing (ac) characteristics. figure 10: i/o timing diagram serial interface input pin capacitance cin_si - 3.3 - 3.3 pf s data max load capacitance cload_sd - 30 - 30 pf s data pull-up resistor rsd 1.5 4.7 1.5 4.7 k ? table 5: two-wire serial bus characteristics (continued) f extclk = 27 mhz; v dd = 1.8v; v dd _io = 2.8v; v aa = 2.8v; v aa _pix = 2.8v; v dd _pll = 2.8v; t a = 25c parameter symbol standard mode fast mode unit min max min max data[11:0] line_valid/ pixclk extclk t r t extclk t f frame_valid leads line_valid by 6 pixclks. frame_valid trails line_valid by 6 pixclks. t plh t pfh t pfl t pll t pd pxl _0 pxl _1 pxl _2 pxl _n 90% 10% t rp t fp 90% 10% frame_valid
ar0230cs_ds rev. 4 pub. 8/15 en 24 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor electrical specifications on semiconductor confidential and proprietary note: i/o timing characteristics are me asured under the following conditions: - temperature is 25c ambient - 10 pf load - 1.8v i/o supply voltage table 6: i/o timing characteristics symbol definition condition min typ max unit f extclk1s input clock frequency 6 C 48 mhz t extclk1 input clock period 20.8 C 166 ns t r input clock rise time C 3 C ns t f input clock fall time C 3 C ns t rp pixclk rise time 2 3.5 5 ns t fp pixclk fall time 2 3.5 5 ns clock duty cycle 45 50 55 % t cp extclk to pixclk propagation delay nominal voltages, pll disabled 10 14 18 ns f pixclk pixclk frequency default, nominal voltages 674.25mhz t pd pixclk to data valid default, nominal voltages 3.6 5.5 9.5 ns t pfh pixclk to fv high default, nominal voltages 2.9 5.3 9 ns t plh pixclk to lv high default, nominal voltages 2.9 5 9 ns t pfl pixclk to fv low default, nominal voltages 2.9 5 9 ns t pll pixclk to lv low default, nominal voltages 2.9 4.8 9 ns c load output load capacitance C <10 C pf c in input pin capacitance C 2.5 C pf
ar0230cs_ds rev. 4 pub. 8/15 en 25 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor electrical specifications on semiconductor confidential and proprietary dc electrical characteristics the dc electrical characteristics are shown in the tables below. caution stresses greater than those listed in table 8 may cause permanent damage to the device. this is a stress rating only, and functional ope ration of the device at these or any other con- ditions above those indicated in the operational sections of this specification is not implied. note: exposure to absolute maximum rating condit ions for extended periods may affect reliability. table 7: dc electrical characteristics symbol definition condition min typ max unit v dd core digital voltage 1.7 1.8 1.95 v v dd _io i/o digital voltage 1.7/2.5 1.8/2.8 1.9/3.1 v v aa analog voltage 2.5 2.8 3.1 v v aa _pix pixel supply voltage 2.5 2.8 3.1 v v dd _pll pll supply voltage 2.5 2.8 3.1 v v dd _slvs hispi supply voltage 0.3 0.4 0.6 v v ih input high voltage v dd _io*0.7 C C v v il input low voltage C C v dd _io*0.3 v i in input leakage current no pull-up resistor; v in = v dd _io or d gnd 20 C C ? a v oh output high voltage v dd _io-0.3 C C v v ol output low voltage C C 0.4 v i oh output high current at specified v oh -22 C C ma i ol output low current at specified v ol CC22ma table 8: absolute maximum ratings symbol definition condition min max unit v dd _max core digital voltage C0.3 2.4 v v dd _io_max i/o digital voltage C0.3 4 v v aa _max analog voltage C0.3 4 v v aa _pix pixel supply voltage C0.3 4 v v dd _pll pll supply voltage C0.3 4 v vdd_slvs_max hispi i/o digital voltage C0.3 2.4 v t st storage temperature C40 85 c
ar0230cs_ds rev. 4 pub. 8/15 en 26 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor electrical specifications on semiconductor confidential and proprietary note: operating currents are measured in ma at the following conditions: - v aa = v aa _pix = v dd _pll = v dd _io =2.8 v - v dd = 1.8 v - pll enabled and pixclk = 74.25 mhz - low power mode enabled - t a = 25c note: operating currents are measured in ma at the following conditions: - v aa = v aa _pix = v dd _pll = v dd _io =2.8 v - v dd = 1.8 v - pll enabled and pixclk = 74.25 mhz - low power mode enabled - t a = 25c note: operating currents are measured in ma at the following conditions: - v aa = v aa _pix = v dd _pll =2.8 v - v dd = v dd _io= 1.8 v - pll enabled and pixclk = 74.25 mhz - low power mode enabled - t a = 25c table 9: 1080p30 hdr (altm) 74mhz parallel 2.8v definition condition symbol voltage min typ max digital operating current streaming 1080p30 i dd 1.8 90 175 220 i/o digital operating current streaming 1080p30 i dd _io 2.8 10 30 50 analog operating current streaming 1080p30 i aa 2.8 354585 pixel supply current streaming 1080p30 i aa _pix 2.8 2 4 7 pll supply current streaming 1080p30 i dd _pll 2.8 5.5 6.2 7 power (mw) 309 557.76 813.2 table 10: 1080p30 linear 74mhz parallel 2.8v definition condition symbol voltage min typ max digital operating current streaming 1080p30 i dd 1.8 75 107 145 i/o digital operating current streaming 1080p30 i dd _io 2.8 10 30 50 analog operating current streaming 1080p30 i aa 2.8 203050 pixel supply current streaming 1080p30 i aa _pix 2.8 1 3 7 pll supply current streaming 1080p30 i dd _pll 2.8 5.5 6.2 7 power (mw) 237.2 386.36 580.2 table 11: 1080p30 hdr (altm) 74mhz parallel 1.8v definition condition symbol voltage min typ max digital operating curren t streaming 1080p30 i dd 1.8 90 175 220 i/o digital operating curr ent streaming 1080p30 i dd _io 1.8 10 20 30 analog operating curren t streaming 1080p30 i aa 2.8 35 45 85 pixel supply current streaming 1080p30 i aa _pix 2.8 2 4 7 pll supply current streaming 1080p30 i dd _pll 2.8 5.5 6.2 7 power (mw) 299 509.76 727.2
ar0230cs_ds rev. 4 pub. 8/15 en 27 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor electrical specifications on semiconductor confidential and proprietary note: operating currents are measured in ma at the following conditions: - v aa = v aa _pix = v dd _pll =2.8 v - v dd = v dd _io= 1.8 v - pll enabled and pixclk = 74.25 mhz - low power mode enabled - t a = 25c note: operating currents are measured in ma at the following conditions: - v aa = v aa _pix = v dd _pll =2.8 v - v dd = v dd _io= 1.8 v - v dd _slvs= 0.4v - pll enabled and pixclk = 37.125 mhz - 4-lane hispi mode - low power mode enabled - t a = 25c table 12: 1080p30 linear 74 mhz parallel 1.8v definition condition symbol voltage min typ max digital operating curren t streaming 1080p30 i dd 1.8 75 107 145 i/o digital operating c urrent streaming 1080p30 i dd _io 1.8 10 20 30 analog operating curren t streaming 1080p30 i aa 2.8 20 30 50 pixel supply current streaming 1080p30 i aa _pix 2.8 1 3 7 pll supply current streaming 1080p30 i dd _pll 2.8 5.5 6.2 7 power (mw) 227.2 338.36 494.2 table 13: 1080p30 hdr (altm) 74 mhz hispi slvs (low power mode) definition condition symbol voltage min typ max digital operating curren t streaming 1080p30 i dd 1.8 145 175 235 analog operating current streaming 1080p30 i dd _io 2.8 25 46 65 pixel supply current streaming 1080p30 i aa 2.8 1 4 7 pll supply current streaming 1080p30 i aa _pix 2.8 6 7.4 8.5 slvs supply current streaming 1080p30 i dd _pll 0.4 3 9 14 power (mw) 351.8 479.32 654
ar0230cs_ds rev. 4 pub. 8/15 en 28 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor electrical specifications on semiconductor confidential and proprietary note: operating currents are measured in ma at the following conditions: - v aa = v aa _pix = v dd _pll =2.8 v - v dd = v dd _io= 1.8 v - v dd _slvs= 0.4v - pll enabled and pixclk = 74.25 mhz - 4-lane hispi mode - low power mode enabled - t a = 25c note: operating currents are measured in ma at the following conditions: - v aa = v aa _pix = v dd _pll =2.8 v - v dd = v dd _io = v dd _slvs = 1.8 v - pll enabled and pixclk = 37.125 mhz - 4-lane hispi mode - low power mode enabled - t a = 25c table 14: 1080p30 linear 74 mhz hispi slvs definition condition symbol voltage min typ max digital operating current streaming 1080p30 i dd 1.8 75 115 155 analog operating current streaming 1080p30 i dd _io 2.8 20 30 50 pixel supply current streaming 1080p30 i aa 2.8 1 3 7 pll supply current streaming 1080p30 i aa _pix 2.8 6 7.4 8.5 slvs supply current streaming 1080p30 i dd _pll 0.4 3 9 14 power (mw) 211.8 323.72 468 table 15: 1080p30 hdr (altm) 74 mhz hispi hivcm (low power mode) definition condition symbol voltage min typ max digital operating curren t streaming 1080p30 i dd 1.8 145 175 235 analog operating curren t streaming 1080p30 i dd _io 2.8 25 46 65 pixel supply current streaming 1080p30 i aa 2.8147 pll supply current streaming 1080p30 i aa _pix 2.8 6 7.4 8.5 slvs supply current streaming 1080p30 i dd _pll 1.8 10 20 30 power (mw) 368.6 511.72 702.4
ar0230cs_ds rev. 4 pub. 8/15 en 29 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor electrical specifications on semiconductor confidential and proprietary note: operating currents are measured in ma at the following conditions: - v aa = v aa _pix = v dd _pll =2.8 v - v dd = v dd _io = v dd _slvs= 1.8 v - pll enabled and pixclk = 74.25 mhz - 4-lane hispi mode - low power mode enabled - t a = 25c note: operating currents are measured in ma at the following conditions: - v aa = v aa _pix = v dd _pll =2.8 v - v dd = v dd _io= 1.8 v - v dd _slvs= 0.4v - pll enabled and pixclk = 74.25 mhz - 4-lane hispi mode - t a = 25c table 16: 1080p30 linear 74 mhz hispi hivcm definition condition symbol voltage min typ max digital operating current streaming 1080p30 i dd 1.8 75 115 155 analog operating current streaming 1080p30 i dd _io 2.8 20 30 50 pixel supply current streaming 1080p30 i aa 2.8137 pll supply current streaming 1080p30 i aa _pix 2.8 6 7.4 8.5 slvs supply current streaming 1080p30 i dd _pll 1.8 10 20 30 power (mw) 228.6 356.12 516.4 table 17: line interleaved hispi slvs definition condition symbol voltage min typ max digital operating current streaming 1080p30 i dd 1.8 185 230 265 analog operating current streaming 1080p30 i dd _io 2.8 20 36 55 pixel supply current streaming 1080p30 i aa 2.8 1 3.3 7 pll supply current streaming 1080p30 i aa _pix 2.8 7 8.2 9.5 slvs supply current streaming 1080p30 i dd _pll 0.4 3 9 14 power (mw) 412.6 550.6 668.8
ar0230cs_ds rev. 4 pub. 8/15 en 30 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor electrical specifications on semiconductor confidential and proprietary note: operating currents are measured in ma at the following conditions: - v aa = v aa _pix = v dd _pll = 2.8 v - v dd = v dd _io = 1.8 v - v dd _slvs = 1.8 v - pll enabled and pixclk = 74.25 mhz - 4-lane hispi mode - t a = 25c hispi electrical specifications the on semiconductor AR023ZM sensor supports both slvs and hivcm hispi modes. refer to the high-speed serial pixel (hispi) interface physical layer specification v2.00.00 for electrical definitions, specif ications, and timing information. the v dd _slvs supply in this datasheet corresponds to v dd _tx in the hispi physical layer specifica- tion. similarly, v dd is equivalent to v dd _hispi as referenced in the specification. the dll as implemented on AR023ZM is limited in the number of available delay steps and differs from the hispi specification as described in this section. table 18: line interleaved hispi hivcm definition condition symbol voltage min typ max digital operating current streaming 1080p30 i dd 1.8 185 230 265 analog operating current streaming 1080p30 i dd _io 2.8 20 36 55 pixel supply current streaming 1080p30 i aa 2.8 1 3.3 7 pll supply current streaming 1080p30 i aa _pix 2.8 7 8.2 9.5 slvs supply current streaming 1080p30 i dd _pll1.8102030 power (mw) 429.4 583 717.2 table 19: channel skew measurement conditions: v dd _hispi = 1.8v;v dd _hispi_tx = 0.4v; data rate =480 mbps; dll set to 0 data lane skew in reference to clock tchskew1phy -150 ps
ar0230cs_ds rev. 4 pub. 8/15 en 31 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor power-on reset and standby timing on semiconductor confidential and proprietary power-on reset and standby timing power-up sequence the recommended power-up sequence for the AR023ZM is shown in figure 11. the available power supplies (v dd _io, v dd , v dd _slvs, v dd _pll, v aa , v aa _pix) must have the separation specified below. 1. turn on v dd _pll power supply. 2. after 100 ? s, turn on v aa and v aa _pix power supply. 3. after 100 ? s, turn on v dd _io power supply. 4. after 100 ? s, turn on vdd power supply. 5. after 100 ? s, turn on vdd_slvs power supply. 6. after the last power supply is stable, enable extclk. 7. assert reset_bar for at least 1ms. the parall el interface will be tri-stated during this time. 8. wait 150000 extclks (for internal initialization into software standby. 9. configure pll, output, and image settings to desired values. 10. wait 1ms for the pll to lock. 11. set streaming mode (r0x301a[2] = 1). figure 11: power up v dd _pll (2.8) v aa _pix v aa (2.8) v dd _io (1.8/2.8) v dd (1.8) v dd _slvs (0.4) extclk reset_bar t0 t1 t2 t3 tx t4 t5 t6 hard reset internal initialization software standby pll lock streaming
ar0230cs_ds rev. 4 pub. 8/15 en 32 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor power-on reset and standby timing on semiconductor confidential and proprietary notes: 1. xtal settling time is component-de pendent, usually taking about 10 C 100 ms. 2. hard reset time is the minimum time required after power rails are settled. in a circuit where hard reset is held down by rc circuit, then the rc ti me must include the all power rail settle time and xtal settle time. 3. it is critical that v dd _pll is not powered up after the other power supplies. it must be powered before or at least at the same time as the others. if the case happens that v dd _pll is powered after other supplies then sensor may have functionality issues and will experience high current draw on this supply. table 20: power-up sequence definition symbol minimum typical maximum unit v dd _pll to v aa /v aa _pix 3 t0 0 100 C ? s v aa /v aa _pix to v dd _io t1 0 100 C ? s v dd _io to v dd t2 0 100 C ? s v dd to v dd _slvs t3 0 100 C ? s xtal settle time tx C 30 1 Cms hard reset t4 1 2 CC ms internal initialization t5 150000 C C extclks pll lock time t6 1 C C ms
ar0230cs_ds rev. 4 pub. 8/15 en 33 ?semiconductor components industries, llc, 2015. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor power-on reset and standby timing on semiconductor confidential and proprietary power-down sequence the recommended power-down sequence for the AR023ZM is shown in figure 12. the available power supplies (v dd _io, v dd , v dd _slvs, v dd _pll, v aa , v aa _pix) must have the separation specified below. 1. disable streaming if output is acti ve by setting standby r0x301a[2] = 0 2. the soft standby state is reached after the current row or frame, depending on config- uration, has ended. 3. turn off v dd _slvs. 4. turn off v dd . 5. turn off v dd _io. 6. turn off v aa /v aa _pix. 7. turn off v dd _pll. figure 12: power down t4 is required between power down and next power up time; all decoupling caps from regulators must be completely discharged. table 21: power-down sequence definition symbol minimum typical maximum unit v dd _slvs to v dd t0 0 C C ? s v dd to v dd _io t1 0 C C ? s v dd _io to v aa /v aa _pix t2 0 C C ? s v aa /v aa _pix to v dd _pll t3 0 C C ? s power down until next power up time t4 100 C C ms v dd _io (1.8/2.8) t4 t 0 t1 t3 t2 extclk v dd _slvs (0.4) v dd (1.8) v aa _pix v aa (2.8) v dd _pll (2.8) power down until next power up cycle
ar0230cs_ds rev. 4 pub. 8/15 en 34 ?semiconductor components industries, llc, 2015 AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor power-on reset and standby timing on semiconductor confidential and proprietary package diagrams figure 13: 80ibga 10 x 10 package diagram
on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillcs pr oduct/patent coverage may be accessed at www.onsemi.com/site/pdf/ patent-marking.pdf. scillc reserves the right to make changes without further noti ce to any products herein. scillc makes no warranty, representat ion or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaim s any and all liability, including without limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data shee ts and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer a pplication by customers technical experts. scillc does not convey any license under its patent rights nor the rights of others. sc illc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc prod uct could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such uninte nded or unauthorized applicatio n, buyer shall indemnify and hol d scillc and its officers, employ ees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly o r indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to a ll applicable copyright laws and is not for resale in any manner. AR023ZM: 1/2.7-inch 2.1 mp/full hd digital image sensor revision history ar0230cs_ds rev. 4 pub. 8/15 en 35 ?semiconductor components industries, llc, 2015 . on semiconductor confidential and proprietary dr-pix is a trademark of semiconductor components industries, ll c (scillc) or its subsidiaries in the united states and/or othe r countries. revision history rev. 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8/3/15 ?initial release

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